Temperature dependence of band gap energies of GaAsN alloys

The temperature dependence of band gap energies of GaAsN alloys was studied with absorption measurements. As the N concentration in GaAsN increased, the temperature dependence of the band gap energy was clearly reduced in comparison with that of GaAs. The redshift of the absorption edge in GaAsN for...

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Veröffentlicht in:	Applied physics letters 2000-03, Vol.76 (10), p.1285-1287
Hauptverfasser:	Uesugi, Katsuhiro, Suemune, Ikuo, Hasegawa, Tatsuo, Akutagawa, Tomoyuki, Nakamura, Takayoshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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