Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection...

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Veröffentlicht in:Applied physics letters 2000-01, Vol.76 (5), p.550-552
Hauptverfasser: Ashrafi, A. B. M. Almamun, Ueta, Akio, Avramescu, Adrian, Kumano, Hidekazu, Suemune, Ikuo, Ok, Young-Woo, Seong, Tae-Yeon
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container_end_page 552
container_issue 5
container_start_page 550
container_title Applied physics letters
container_volume 76
creator Ashrafi, A. B. M. Almamun
Ueta, Akio
Avramescu, Adrian
Kumano, Hidekazu
Suemune, Ikuo
Ok, Young-Woo
Seong, Tae-Yeon
description A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature.
doi_str_mv 10.1063/1.125851
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title Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers
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