Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

InGaN multiple-quantum-well laser diodes have been fabricated on fully coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown “wing” regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on these low-dislocatio...

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Veröffentlicht in:	Applied physics letters 2000-01, Vol.76 (5), p.529-531
Hauptverfasser:	Hansen, M., Fini, P., Zhao, L., Abare, A. C., Coldren, L. A., Speck, J. S., DenBaars, S. P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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