Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

We present the growth and characterization of p-i-n photodiodes based on ZnBeSe and ZnMgBeSe compounds. High-quality diodes exhibiting dark current as low as 12 nA/cm2 at −2 V bias have been fabricated. The spectral response shows a high responsivity of 0.17 A/W at 450 nm, with a rejection of ∼104 a...

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Veröffentlicht in:Applied physics letters 2000-01, Vol.76 (2), p.242-244
Hauptverfasser: Vigué, F., Tournié, E., Faurie, J.-P.
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Faurie, J.-P.
description We present the growth and characterization of p-i-n photodiodes based on ZnBeSe and ZnMgBeSe compounds. High-quality diodes exhibiting dark current as low as 12 nA/cm2 at −2 V bias have been fabricated. The spectral response shows a high responsivity of 0.17 A/W at 450 nm, with a rejection of ∼104 at longer wavelengths. Our results thus demonstrate the potential of ZnSe-based heterostructures for efficient detection in the visible-ultraviolet region.
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title Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range
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