Ab initio investigation of C incorporation mechanisms on Si(001)

Ab initio calculations were performed to investigate adsorption and diffusion of C on the Si(001) surface at different surface and subsurface sites. Incorporation mechanisms of both substitutional and interstitial C during film deposition and growth were proposed. A surface diffusion process resulti...

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Veröffentlicht in:	Applied physics letters 2000-02, Vol.76 (7), p.885-887
Hauptverfasser:	Liu, C.-L., Borucki, L. J., Merchant, T., Stoker, M., Korkin, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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