Tantalum carbide ohmic contacts to n -type silicon carbide

Tantalum carbide contacts with and without Au, Pt, and W/WC overlayers on n-type 6H–SiC (0001) were ohmic after annealing at temperatures between 800 and 1075 °C. Specific contact resistivities (SCRs) were calculated from current–voltage measurements of transmission line model patterns at temperatur...

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Veröffentlicht in:	Applied physics letters 1999-12, Vol.75 (25), p.3956-3958
Hauptverfasser:	Jang, T., Porter, L. M., Rutsch, G. W. M., Odekirk, B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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