Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

We report on intersubband photocurrent spectroscopy of self-assembled InAs/GaAs quantum dots (QDs) both in normal incidence and in multipass waveguide geometry. The bound-to-continuum transition energy in the conduction band lies in the 200–500 meV spectral range. Polarization dependent photocurrent...

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Veröffentlicht in:Applied physics letters 1999-12, Vol.75 (23), p.3599-3601
Hauptverfasser: Chu, L., Zrenner, A., Böhm, G., Abstreiter, G.
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container_title Applied physics letters
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creator Chu, L.
Zrenner, A.
Böhm, G.
Abstreiter, G.
description We report on intersubband photocurrent spectroscopy of self-assembled InAs/GaAs quantum dots (QDs) both in normal incidence and in multipass waveguide geometry. The bound-to-continuum transition energy in the conduction band lies in the 200–500 meV spectral range. Polarization dependent photocurrent spectroscopy shows that the intersubband transitions in the InAs-QDs are nearly independent of the polarization of the incoming radiation.
doi_str_mv 10.1063/1.125400
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title Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
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