Experimental and theoretical studies of phonons in hexagonal InN
The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (11̄02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E2(low) at 87 cm−1, E2(high) at 488 cm−1, A1(TO) at 447 cm−1, E1(TO) at 476 cm−1...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1999-11, Vol.75 (21), p.3297-3299 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3299 |
|---|---|
| container_issue | 21 |
| container_start_page | 3297 |
| container_title | Applied physics letters |
| container_volume | 75 |
| creator | Davydov, V. Yu Emtsev, V. V. Goncharuk, I. N. Smirnov, A. N. Petrikov, V. D. Mamutin, V. V. Vekshin, V. A. Ivanov, S. V. Smirnov, M. B. Inushima, T. |
| description | The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (11̄02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E2(low) at 87 cm−1, E2(high) at 488 cm−1, A1(TO) at 447 cm−1, E1(TO) at 476 cm−1, A1(LO) at 586 cm−1, and E1(LO) at 593 cm−1. The ratio between the InN static dielectric constants for the ordinary and extraordinary directions was found to be ε⊥0/ε∥0=0.91. The phonon dispersion curves, phonon density-of-state function, and lattice specific heat were calculated. The Debye temperature at 0 K for hexagonal InN was estimated to be 370 K. |
| doi_str_mv | 10.1063/1.125330 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_125330</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_125330</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-912551594ed962ca0dfae7f4ed3bdd9645c8cf55ed60ee3befc6fc76e5979e913</originalsourceid><addsrcrecordid>eNotj0FLAzEUhIMouFbBn5Cjl615-5psc1NKrYWiFz0vafLirtRkSVao_95IPQ3fDAwzjN2CmINQeA9zaCSiOGMViLatEWB5ziohBNZKS7hkVzl_FpQNYsUe1seR0vBFYTIHboLjU08x0TTYwnn6dgNlHj0f-xhiyHwIvKej-Yih5Nvwcs0uvDlkuvnXGXt_Wr-tnuvd62a7etzVttEw1bqskiD1gpxWjTXCeUOtL4h7V6yFtEvrpSSnBBHuyVvlbatI6laTBpyxu1OvTTHnRL4by2yTfjoQ3d_zDrrTc_wF0IVLjQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Experimental and theoretical studies of phonons in hexagonal InN</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Davydov, V. Yu ; Emtsev, V. V. ; Goncharuk, I. N. ; Smirnov, A. N. ; Petrikov, V. D. ; Mamutin, V. V. ; Vekshin, V. A. ; Ivanov, S. V. ; Smirnov, M. B. ; Inushima, T.</creator><creatorcontrib>Davydov, V. Yu ; Emtsev, V. V. ; Goncharuk, I. N. ; Smirnov, A. N. ; Petrikov, V. D. ; Mamutin, V. V. ; Vekshin, V. A. ; Ivanov, S. V. ; Smirnov, M. B. ; Inushima, T.</creatorcontrib><description>The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (11̄02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E2(low) at 87 cm−1, E2(high) at 488 cm−1, A1(TO) at 447 cm−1, E1(TO) at 476 cm−1, A1(LO) at 586 cm−1, and E1(LO) at 593 cm−1. The ratio between the InN static dielectric constants for the ordinary and extraordinary directions was found to be ε⊥0/ε∥0=0.91. The phonon dispersion curves, phonon density-of-state function, and lattice specific heat were calculated. The Debye temperature at 0 K for hexagonal InN was estimated to be 370 K.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.125330</identifier><language>eng</language><ispartof>Applied physics letters, 1999-11, Vol.75 (21), p.3297-3299</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-912551594ed962ca0dfae7f4ed3bdd9645c8cf55ed60ee3befc6fc76e5979e913</citedby><cites>FETCH-LOGICAL-c291t-912551594ed962ca0dfae7f4ed3bdd9645c8cf55ed60ee3befc6fc76e5979e913</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Davydov, V. Yu</creatorcontrib><creatorcontrib>Emtsev, V. V.</creatorcontrib><creatorcontrib>Goncharuk, I. N.</creatorcontrib><creatorcontrib>Smirnov, A. N.</creatorcontrib><creatorcontrib>Petrikov, V. D.</creatorcontrib><creatorcontrib>Mamutin, V. V.</creatorcontrib><creatorcontrib>Vekshin, V. A.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><creatorcontrib>Smirnov, M. B.</creatorcontrib><creatorcontrib>Inushima, T.</creatorcontrib><title>Experimental and theoretical studies of phonons in hexagonal InN</title><title>Applied physics letters</title><description>The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (11̄02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E2(low) at 87 cm−1, E2(high) at 488 cm−1, A1(TO) at 447 cm−1, E1(TO) at 476 cm−1, A1(LO) at 586 cm−1, and E1(LO) at 593 cm−1. The ratio between the InN static dielectric constants for the ordinary and extraordinary directions was found to be ε⊥0/ε∥0=0.91. The phonon dispersion curves, phonon density-of-state function, and lattice specific heat were calculated. The Debye temperature at 0 K for hexagonal InN was estimated to be 370 K.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotj0FLAzEUhIMouFbBn5Cjl615-5psc1NKrYWiFz0vafLirtRkSVao_95IPQ3fDAwzjN2CmINQeA9zaCSiOGMViLatEWB5ziohBNZKS7hkVzl_FpQNYsUe1seR0vBFYTIHboLjU08x0TTYwnn6dgNlHj0f-xhiyHwIvKej-Yih5Nvwcs0uvDlkuvnXGXt_Wr-tnuvd62a7etzVttEw1bqskiD1gpxWjTXCeUOtL4h7V6yFtEvrpSSnBBHuyVvlbatI6laTBpyxu1OvTTHnRL4by2yTfjoQ3d_zDrrTc_wF0IVLjQ</recordid><startdate>19991122</startdate><enddate>19991122</enddate><creator>Davydov, V. Yu</creator><creator>Emtsev, V. V.</creator><creator>Goncharuk, I. N.</creator><creator>Smirnov, A. N.</creator><creator>Petrikov, V. D.</creator><creator>Mamutin, V. V.</creator><creator>Vekshin, V. A.</creator><creator>Ivanov, S. V.</creator><creator>Smirnov, M. B.</creator><creator>Inushima, T.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991122</creationdate><title>Experimental and theoretical studies of phonons in hexagonal InN</title><author>Davydov, V. Yu ; Emtsev, V. V. ; Goncharuk, I. N. ; Smirnov, A. N. ; Petrikov, V. D. ; Mamutin, V. V. ; Vekshin, V. A. ; Ivanov, S. V. ; Smirnov, M. B. ; Inushima, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-912551594ed962ca0dfae7f4ed3bdd9645c8cf55ed60ee3befc6fc76e5979e913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Davydov, V. Yu</creatorcontrib><creatorcontrib>Emtsev, V. V.</creatorcontrib><creatorcontrib>Goncharuk, I. N.</creatorcontrib><creatorcontrib>Smirnov, A. N.</creatorcontrib><creatorcontrib>Petrikov, V. D.</creatorcontrib><creatorcontrib>Mamutin, V. V.</creatorcontrib><creatorcontrib>Vekshin, V. A.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><creatorcontrib>Smirnov, M. B.</creatorcontrib><creatorcontrib>Inushima, T.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Davydov, V. Yu</au><au>Emtsev, V. V.</au><au>Goncharuk, I. N.</au><au>Smirnov, A. N.</au><au>Petrikov, V. D.</au><au>Mamutin, V. V.</au><au>Vekshin, V. A.</au><au>Ivanov, S. V.</au><au>Smirnov, M. B.</au><au>Inushima, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental and theoretical studies of phonons in hexagonal InN</atitle><jtitle>Applied physics letters</jtitle><date>1999-11-22</date><risdate>1999</risdate><volume>75</volume><issue>21</issue><spage>3297</spage><epage>3299</epage><pages>3297-3299</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The first- and second-order Raman scattering and IR reflection have been studied for hexagonal InN layers grown on (0001) and (11̄02) sapphire substrates. All six Raman-active optical phonons were observed and assigned: E2(low) at 87 cm−1, E2(high) at 488 cm−1, A1(TO) at 447 cm−1, E1(TO) at 476 cm−1, A1(LO) at 586 cm−1, and E1(LO) at 593 cm−1. The ratio between the InN static dielectric constants for the ordinary and extraordinary directions was found to be ε⊥0/ε∥0=0.91. The phonon dispersion curves, phonon density-of-state function, and lattice specific heat were calculated. The Debye temperature at 0 K for hexagonal InN was estimated to be 370 K.</abstract><doi>10.1063/1.125330</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1999-11, Vol.75 (21), p.3297-3299 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_125330 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Experimental and theoretical studies of phonons in hexagonal InN |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T19%3A03%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Experimental%20and%20theoretical%20studies%20of%20phonons%20in%20hexagonal%20InN&rft.jtitle=Applied%20physics%20letters&rft.au=Davydov,%20V.%20Yu&rft.date=1999-11-22&rft.volume=75&rft.issue=21&rft.spage=3297&rft.epage=3299&rft.pages=3297-3299&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.125330&rft_dat=%3Ccrossref%3E10_1063_1_125330%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |