Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol–gel processing

Tetragonal Ba0.8Sr0.2TiO3 thin films with large columnar grains 100–200 nm in diameter have been prepared on Pt/Ti/SiO2/Si substrates using a 0.05 M solution precursor by sol–gel processing. The ferroelectric phase transition in the prepared Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed to...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1999-11, Vol.75 (21), p.3402-3404
Hauptverfasser:	Cheng, Jian-Gong, Meng, Xiang-Jian, Tang, Jun, Guo, Shao-Ling, Chu, Jun-Hao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	3404
container_issue	21
container_start_page	3402
container_title	Applied physics letters
container_volume	75
creator	Cheng, Jian-Gong Meng, Xiang-Jian Tang, Jun Guo, Shao-Ling Chu, Jun-Hao
description	Tetragonal Ba0.8Sr0.2TiO3 thin films with large columnar grains 100–200 nm in diameter have been prepared on Pt/Ti/SiO2/Si substrates using a 0.05 M solution precursor by sol–gel processing. The ferroelectric phase transition in the prepared Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed to 40 °C with a maximum dielectric constant of εr (100 kHz)=680. The observed low dissipation factor tan δ=2.6% and high pyroelectric coefficient p=4.586×10−4 C/m2 K at 33 °C render the prepared Ba0.8Sr0.2TiO3 thin films promising for uncooled infrared detector and thermal imaging applications.
doi_str_mv	10.1063/1.125307
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_125307</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_125307</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-f2e3e1bf2220dccfbf607907f30e795458348b42fac8e92e1da7df2acc8310a03</originalsourceid><addsrcrecordid>eNotkLFOwzAURS0EEqUg8QkeWRLes-s4GaGCglRUJMocOc5zMErryk6RuvEP_CFfQqsyXd0znOEwdo2QIxTyFnMUSoI-YSMErTOJWJ6yEQDIrKgUnrOLlD73VwkpR6x73cVAPdkhesvvDeTlW4RcLP1C8uHDr7nz_SrxlqL_opa7GFbccMhB8ReeQr8dfFjzTSS7jSlE3uwO9Pf7p6N-j4OllPy6u2RnzvSJrv53zN4fH5bTp2y-mD1P7-aZFUINmRMkCRsnhIDWWte4AnQF2kkgXamJKuWkbCbCGVtSJQhbo1snjLWlRDAgx-zm6LUxpBTJ1ZvoVybuaoT6EKjG-hhI_gHyPlgt</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol–gel processing</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Cheng, Jian-Gong ; Meng, Xiang-Jian ; Tang, Jun ; Guo, Shao-Ling ; Chu, Jun-Hao</creator><creatorcontrib>Cheng, Jian-Gong ; Meng, Xiang-Jian ; Tang, Jun ; Guo, Shao-Ling ; Chu, Jun-Hao</creatorcontrib><description>Tetragonal Ba0.8Sr0.2TiO3 thin films with large columnar grains 100–200 nm in diameter have been prepared on Pt/Ti/SiO2/Si substrates using a 0.05 M solution precursor by sol–gel processing. The ferroelectric phase transition in the prepared Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed to 40 °C with a maximum dielectric constant of εr (100 kHz)=680. The observed low dissipation factor tan δ=2.6% and high pyroelectric coefficient p=4.586×10−4 C/m2 K at 33 °C render the prepared Ba0.8Sr0.2TiO3 thin films promising for uncooled infrared detector and thermal imaging applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.125307</identifier><language>eng</language><ispartof>Applied physics letters, 1999-11, Vol.75 (21), p.3402-3404</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-f2e3e1bf2220dccfbf607907f30e795458348b42fac8e92e1da7df2acc8310a03</citedby><cites>FETCH-LOGICAL-c225t-f2e3e1bf2220dccfbf607907f30e795458348b42fac8e92e1da7df2acc8310a03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Cheng, Jian-Gong</creatorcontrib><creatorcontrib>Meng, Xiang-Jian</creatorcontrib><creatorcontrib>Tang, Jun</creatorcontrib><creatorcontrib>Guo, Shao-Ling</creatorcontrib><creatorcontrib>Chu, Jun-Hao</creatorcontrib><title>Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol–gel processing</title><title>Applied physics letters</title><description>Tetragonal Ba0.8Sr0.2TiO3 thin films with large columnar grains 100–200 nm in diameter have been prepared on Pt/Ti/SiO2/Si substrates using a 0.05 M solution precursor by sol–gel processing. The ferroelectric phase transition in the prepared Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed to 40 °C with a maximum dielectric constant of εr (100 kHz)=680. The observed low dissipation factor tan δ=2.6% and high pyroelectric coefficient p=4.586×10−4 C/m2 K at 33 °C render the prepared Ba0.8Sr0.2TiO3 thin films promising for uncooled infrared detector and thermal imaging applications.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotkLFOwzAURS0EEqUg8QkeWRLes-s4GaGCglRUJMocOc5zMErryk6RuvEP_CFfQqsyXd0znOEwdo2QIxTyFnMUSoI-YSMErTOJWJ6yEQDIrKgUnrOLlD73VwkpR6x73cVAPdkhesvvDeTlW4RcLP1C8uHDr7nz_SrxlqL_opa7GFbccMhB8ReeQr8dfFjzTSS7jSlE3uwO9Pf7p6N-j4OllPy6u2RnzvSJrv53zN4fH5bTp2y-mD1P7-aZFUINmRMkCRsnhIDWWte4AnQF2kkgXamJKuWkbCbCGVtSJQhbo1snjLWlRDAgx-zm6LUxpBTJ1ZvoVybuaoT6EKjG-hhI_gHyPlgt</recordid><startdate>19991122</startdate><enddate>19991122</enddate><creator>Cheng, Jian-Gong</creator><creator>Meng, Xiang-Jian</creator><creator>Tang, Jun</creator><creator>Guo, Shao-Ling</creator><creator>Chu, Jun-Hao</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991122</creationdate><title>Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol–gel processing</title><author>Cheng, Jian-Gong ; Meng, Xiang-Jian ; Tang, Jun ; Guo, Shao-Ling ; Chu, Jun-Hao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-f2e3e1bf2220dccfbf607907f30e795458348b42fac8e92e1da7df2acc8310a03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cheng, Jian-Gong</creatorcontrib><creatorcontrib>Meng, Xiang-Jian</creatorcontrib><creatorcontrib>Tang, Jun</creatorcontrib><creatorcontrib>Guo, Shao-Ling</creatorcontrib><creatorcontrib>Chu, Jun-Hao</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cheng, Jian-Gong</au><au>Meng, Xiang-Jian</au><au>Tang, Jun</au><au>Guo, Shao-Ling</au><au>Chu, Jun-Hao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol–gel processing</atitle><jtitle>Applied physics letters</jtitle><date>1999-11-22</date><risdate>1999</risdate><volume>75</volume><issue>21</issue><spage>3402</spage><epage>3404</epage><pages>3402-3404</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Tetragonal Ba0.8Sr0.2TiO3 thin films with large columnar grains 100–200 nm in diameter have been prepared on Pt/Ti/SiO2/Si substrates using a 0.05 M solution precursor by sol–gel processing. The ferroelectric phase transition in the prepared Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed to 40 °C with a maximum dielectric constant of εr (100 kHz)=680. The observed low dissipation factor tan δ=2.6% and high pyroelectric coefficient p=4.586×10−4 C/m2 K at 33 °C render the prepared Ba0.8Sr0.2TiO3 thin films promising for uncooled infrared detector and thermal imaging applications.</abstract><doi>10.1063/1.125307</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0003-6951
ispartof	Applied physics letters, 1999-11, Vol.75 (21), p.3402-3404
issn	0003-6951 1077-3118
language	eng
recordid	cdi_crossref_primary_10_1063_1_125307
source	AIP Journals Complete; AIP Digital Archive
title	Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol–gel processing
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T12%3A58%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Pyroelectric%20Ba0.8Sr0.2TiO3%20thin%20films%20derived%20from%20a%200.05%20M%20solution%20precursor%20by%20sol%E2%80%93gel%20processing&rft.jtitle=Applied%20physics%20letters&rft.au=Cheng,%20Jian-Gong&rft.date=1999-11-22&rft.volume=75&rft.issue=21&rft.spage=3402&rft.epage=3404&rft.pages=3402-3404&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.125307&rft_dat=%3Ccrossref%3E10_1063_1_125307%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true