Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1−x...

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Veröffentlicht in:	Applied Physics Letters 1999-10, Vol.75 (15), p.2280-2282
Hauptverfasser:	O’Steen, M. L., Fedler, F., Hauenstein, R. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	CHEMICAL COMPOSITION DESORPTION ELECTRON DIFFRACTION GALLIUM COMPOUNDS GALLIUM NITRIDES HETEROJUNCTIONS INDIUM COMPOUNDS INDIUM NITRIDES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY SEGREGATION STOICHIOMETRY SUBSTRATES TEMPERATURE DEPENDENCE X-RAY DIFFRACTION
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