Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1−x...

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Veröffentlicht in:	Applied Physics Letters 1999-10, Vol.75 (15), p.2280-2282
Hauptverfasser:	O’Steen, M. L., Fedler, F., Hauenstein, R. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	CHEMICAL COMPOSITION DESORPTION ELECTRON DIFFRACTION GALLIUM COMPOUNDS GALLIUM NITRIDES HETEROJUNCTIONS INDIUM COMPOUNDS INDIUM NITRIDES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY SEGREGATION STOICHIOMETRY SUBSTRATES TEMPERATURE DEPENDENCE X-RAY DIFFRACTION
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container_title	Applied Physics Letters
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creator	O’Steen, M. L. Fedler, F. Hauenstein, R. J.
description	Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1−xN epitaxial materials. HRXRD results for InxGa1−xN/GaN superlattices reveal a particularly strong dependence of average alloy composition x̄ upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x̄ with increasing growth temperature within the narrow range 590–670 °C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss.
doi_str_mv	10.1063/1.124990
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L.</creatorcontrib><creatorcontrib>Fedler, F.</creatorcontrib><creatorcontrib>Hauenstein, R. J.</creatorcontrib><title>Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy</title><title>Applied Physics Letters</title><description>Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1−xN epitaxial materials. HRXRD results for InxGa1−xN/GaN superlattices reveal a particularly strong dependence of average alloy composition x̄ upon both substrate growth temperature and incident V/III flux ratio. 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J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy</atitle><jtitle>Applied Physics Letters</jtitle><date>1999-10-11</date><risdate>1999</risdate><volume>75</volume><issue>15</issue><spage>2280</spage><epage>2282</epage><pages>2280-2282</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1−xN epitaxial materials. HRXRD results for InxGa1−xN/GaN superlattices reveal a particularly strong dependence of average alloy composition x̄ upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x̄ with increasing growth temperature within the narrow range 590–670 °C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss.</abstract><cop>United States</cop><doi>10.1063/1.124990</doi><tpages>3</tpages></addata></record>
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subjects	CHEMICAL COMPOSITION DESORPTION ELECTRON DIFFRACTION GALLIUM COMPOUNDS GALLIUM NITRIDES HETEROJUNCTIONS INDIUM COMPOUNDS INDIUM NITRIDES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY SEGREGATION STOICHIOMETRY SUBSTRATES TEMPERATURE DEPENDENCE X-RAY DIFFRACTION
title	Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
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