High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates

Thin-film transistors have been fabricated in polycrystalline silicon films on steel foil. The polycrystalline silicon films were formed by the crystallization of hydrogenated amorphous silicon, which had been deposited on 200-μm-thick foils of stainless steel coated with ∼0.5-μm-thick layers of SiO...

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Veröffentlicht in:	Applied physics letters 1999-10, Vol.75 (15), p.2244-2246
Hauptverfasser:	Wu, Ming, Pangal, Kiran, Sturm, J. C., Wagner, Sigurd
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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