Determination of photoluminescence mechanism in InGaN quantum wells

Determination of photoluminescence mechanism in InGaN quantum wells

We report on the unambiguous experimental determination of the photoluminescence mechanism in a set of In0.25Ga0.75N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study...

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Veröffentlicht in:Applied physics letters 1999-10, Vol.75 (15), p.2241-2243
Hauptverfasser: Riblet, Philippe, Hirayama, Hideki, Kinoshita, Atsuhiro, Hirata, Akira, Sugano, Takuo, Aoyagi, Yoshinobu
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container_end_page 2243
container_issue 15
container_start_page 2241
container_title Applied physics letters
container_volume 75
creator Riblet, Philippe
Hirayama, Hideki
Kinoshita, Atsuhiro
Hirata, Akira
Sugano, Takuo
Aoyagi, Yoshinobu
description We report on the unambiguous experimental determination of the photoluminescence mechanism in a set of In0.25Ga0.75N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way, we show that the photoluminescence is not coming from quantum dots or very localized states in the quantum well, but from the quantum well itself under the influence of a piezoelectric field induced by strain. The previously reported abnormal photoluminescence shifts and temperature dependencies can thus be explained.
doi_str_mv 10.1063/1.124977
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title Determination of photoluminescence mechanism in InGaN quantum wells
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