Void nucleation on intentionally added defects in Al interconnects

Void nucleation in passivated aluminum interconnects was studied using high voltage scanning electron microscopy. To test theories about stress-induced and electromigration void nucleation, Ar ions were implanted into Al specimens. The Ar atoms precipitated and formed bubbles that served as nucleati...

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Veröffentlicht in:	Applied physics letters 1999-08, Vol.75 (5), p.633-635
Hauptverfasser:	Doan, J. C., Lee, S.-H., Bravman, J. C., Flinn, P. A., Marieb, T. N.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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