Optical properties of β-Si3N4 single crystals grown from a Si melt in N2

Large colored β-Si3N4 single crystals were successfully grown from a Si melt in N2. The transmission optical absorption of coloring β-Si3N4 single crystal shows that impurities introduce a midgap level of ∼2.4 eV into the wide band gap of ∼5.3 eV in nondoped Si3N4. The infrared transmission spectrum...

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Veröffentlicht in:	Applied physics letters 1999-06, Vol.74 (23), p.3498-3500
Hauptverfasser:	Munakata, F., Matsuo, K., Furuya, K., Akimune, Y., Ye, J., Ishikawa, I.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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