A self-assembled single-electron tunneling transistor

A single-electron tunneling transistor was made by capturing a chemically synthesized gold cluster between two gold electrodes. The transistor had a quasiperiodic modulation of the current–voltage characteristics as a function of a gate voltage applied to an oxidized aluminum electrode at 4.2 K. The...

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Veröffentlicht in:	Applied physics letters 1999-04, Vol.74 (17), p.2546-2548
Hauptverfasser:	Magnus Persson, S. H., Olofsson, Linda, Gunnarsson, Linda
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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