Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes

Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes

Near-field scanning optical microscopy is used to image electroluminescence from three and ten quantum-well (QW) indium gallium nitride based laser diodes. Facet cross sections are imaged with a spatial resolution of

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Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1999-04, Vol.74 (16), p.2349-2351
Hauptverfasser: Young, D. K., Mack, M. P., Abare, A. C., Hansen, M., Coldren, L. A., Denbaars, S. P., Hu, E. L., Awschalom, D. D.
Format: Artikel
Sprache:eng
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Beschreibung
Zusammenfassung:Near-field scanning optical microscopy is used to image electroluminescence from three and ten quantum-well (QW) indium gallium nitride based laser diodes. Facet cross sections are imaged with a spatial resolution of
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123847