Full-band Monte Carlo model of electron and hole transport in strained Si including inelastic acoustic phonon scattering

Full-band Monte Carlo simulations of electron and hole transport in strained Si on Si0.7Ge0.3 have been performed with a transport model which includes a wave-vector-dependent inelastic acoustic phonon scattering rate. Only two unambiguously determined deformation potentials are needed to achieve ex...

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Veröffentlicht in:	Applied physics letters 1999-04, Vol.74 (15), p.2185-2187
Hauptverfasser:	Fischer, Björn, Hofmann, Karl R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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