Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilati...
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| Veröffentlicht in: | Applied Physics Letters 1999-03, Vol.74 (9), p.1299-1301 |
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| container_title | Applied Physics Letters |
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| creator | Venezia, V. C. Haynes, T. E. Agarwal, Aditya Pelaz, L. Gossmann, H.-J. Jacobson, D. C. Eaglesham, D. J. |
| description | We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. |
| doi_str_mv | 10.1063/1.123530 |
| format | Article |
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The buried SiO2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.123530</identifier><language>eng</language><publisher>United States</publisher><subject>ANNEALING ; BORON ; CRYSTAL DEFECTS ; DIFFUSION ; GETTERS ; INTERSTITIALS ; ION IMPLANTATION ; KEV RANGE 10-100 ; MATERIALS SCIENCE ; MEV RANGE 01-10 ; SILICON ; SILICON COMPOUNDS ; SILICON OXIDES ; VACANCIES</subject><ispartof>Applied Physics Letters, 1999-03, Vol.74 (9), p.1299-1301</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c251t-f0d0c185fb729e27c1bc7e21af70ca8c93070cf26833fba7e61dbb6df14cb2013</citedby><cites>FETCH-LOGICAL-c251t-f0d0c185fb729e27c1bc7e21af70ca8c93070cf26833fba7e61dbb6df14cb2013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/321455$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Venezia, V. 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Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant.</description><subject>ANNEALING</subject><subject>BORON</subject><subject>CRYSTAL DEFECTS</subject><subject>DIFFUSION</subject><subject>GETTERS</subject><subject>INTERSTITIALS</subject><subject>ION IMPLANTATION</subject><subject>KEV RANGE 10-100</subject><subject>MATERIALS SCIENCE</subject><subject>MEV RANGE 01-10</subject><subject>SILICON</subject><subject>SILICON COMPOUNDS</subject><subject>SILICON OXIDES</subject><subject>VACANCIES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEQhoMoWKvgT4g3L1tnkmazPUrxC1q8WK8hO5vQyHZ3SdKD_96Uepp5eR_m42XsHmGBUMsnXKCQSsIFmyFoXUnE5pLNAEBW9UrhNbtJ6adIJaScsd3W0d4OIR24HyPPe8ej646Uwzjw0fMwZBdTDjnYnqfjVITNx2hPfiou37rvKhym3haw4yn0gcbhll152yd391_nbPf68rV-rzafbx_r501FQmGuPHRA2CjfarFyQhO2pJ1A6zWQbWgloTRe1I2UvrXa1di1bd15XFIrAOWcPZznjuVEkyjk8k3ZPzjKRgpcKlWYxzNDcUwpOm-mGA42_hoEc4rMoDlHJv8Agt1fHg</recordid><startdate>19990301</startdate><enddate>19990301</enddate><creator>Venezia, V. 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J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon</atitle><jtitle>Applied Physics Letters</jtitle><date>1999-03-01</date><risdate>1999</risdate><volume>74</volume><issue>9</issue><spage>1299</spage><epage>1301</epage><pages>1299-1301</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant.</abstract><cop>United States</cop><doi>10.1063/1.123530</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied Physics Letters, 1999-03, Vol.74 (9), p.1299-1301 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals; AIP Digital Archive |
| subjects | ANNEALING BORON CRYSTAL DEFECTS DIFFUSION GETTERS INTERSTITIALS ION IMPLANTATION KEV RANGE 10-100 MATERIALS SCIENCE MEV RANGE 01-10 SILICON SILICON COMPOUNDS SILICON OXIDES VACANCIES |
| title | Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon |
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