Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers

We have examined Si-doping effects in InGaN/InGaN quantum-well (QW) structures, especially the influence of Si-doped InGaN barrier layers on the growth mechanism of QW structures, by atomic force microscopy (AFM) and by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. Our AFM observ...

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Veröffentlicht in:	Applied physics letters 1999-02, Vol.74 (8), p.1153-1155
Hauptverfasser:	Uchida, Kenji, Tang, Tao, Goto, Shigeo, Mishima, Tomoyoshi, Niwa, Atsuko, Gotoh, Jun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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