Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Self-organized GaAs/(GaAs)4(AlAs)2 quantum-wire (QWR) lasers were grown on (775)B-oriented GaAs substrates by molecular-beam epitaxy. The QWRs were naturally formed at thick parts in the GaAs/(GaAs)4(AlAs)2 quantum well with a corrugated AlAs-on-GaAs upper interface and a flat GaAs-on-AlAs lower int...

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Veröffentlicht in:	Applied physics letters 1999-02, Vol.74 (6), p.780-782
Hauptverfasser:	Higashiwaki, Masataka, Shimomura, Satoshi, Hiyamizu, Satoshi, Ikawa, Seiji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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