Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Self-organized GaAs/(GaAs)4(AlAs)2 quantum-wire (QWR) lasers were grown on (775)B-oriented GaAs substrates by molecular-beam epitaxy. The QWRs were naturally formed at thick parts in the GaAs/(GaAs)4(AlAs)2 quantum well with a corrugated AlAs-on-GaAs upper interface and a flat GaAs-on-AlAs lower int...

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Veröffentlicht in:Applied physics letters 1999-02, Vol.74 (6), p.780-782
Hauptverfasser: Higashiwaki, Masataka, Shimomura, Satoshi, Hiyamizu, Satoshi, Ikawa, Seiji
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container_issue 6
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container_title Applied physics letters
container_volume 74
creator Higashiwaki, Masataka
Shimomura, Satoshi
Hiyamizu, Satoshi
Ikawa, Seiji
description Self-organized GaAs/(GaAs)4(AlAs)2 quantum-wire (QWR) lasers were grown on (775)B-oriented GaAs substrates by molecular-beam epitaxy. The QWRs were naturally formed at thick parts in the GaAs/(GaAs)4(AlAs)2 quantum well with a corrugated AlAs-on-GaAs upper interface and a flat GaAs-on-AlAs lower interface. The density of the QWRs was as high as 8×106 cm−1. Stripe-geometry lasers with the self-organized (775)B GaAs/(GaAs)4(AlAs)2 QWRs as an active region oscillated at 20 °C with threshold current densities of about 3 kA/cm2 for uncoated mirrors.
doi_str_mv 10.1063/1.123365
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title Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
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