Direct transition at the fundamental gap in light-emitting nanocrystalline Si thin films

Optical transitions at the fundamental gaps of 1.20–1.37 eV are observed at 293 K directly by electroreflectance (ER) spectroscopy in nanocrystalline Si (nc-Si) thin films, from which photoluminescence (PL) with dominant peak energies of 1.65–1.75 eV is observed. Also observed by ER are optical tran...

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Veröffentlicht in:	Applied physics letters 1999-05, Vol.74 (22), p.3323-3325
Hauptverfasser:	Toyama, Toshihiko, Kotani, Yoshihiro, Shimode, Akihito, Okamoto, Hiroaki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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