Germanium “quantum dots” embedded in silicon: Quantitative study of self-alignment and coarsening

We report on experiments aiming to produce Ge quantum dots embedded in Si. Employing cross-sectional transmission electron microscopy, we have studied the misfit stress-induced self-alignment of islands belonging to consecutive Stranski–Krastanov layers of Ge buried in Si by molecular beam epitaxy....

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Veröffentlicht in:	Applied physics letters 1999-01, Vol.74 (2), p.269-271
Hauptverfasser:	Kienzle, O., Ernst, F., Rühle, M., Schmidt, O. G., Eberl, K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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