Confirmation of proton beam bending in graded Si1−xGex/Si layers using ion channeling

Confirmation of proton beam bending in graded Si1−xGex/Si layers using ion channeling

A graded composition Si1−xGex/Si [001] layer, which has recently been proposed as a method for bending and extracting protons from high-energy particle accelerators, has been studied by angle-resolved ion channeling analysis using focused MeV proton and He+ beams. Backscattering spectrometry confirm...

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Veröffentlicht in:Applied physics letters 1999-01, Vol.74 (2), p.227-229
Hauptverfasser: de Kerckhove, D. G., Breese, M. B. H., Smulders, P. J. M., Jamieson, D. N.
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container_end_page 229
container_issue 2
container_start_page 227
container_title Applied physics letters
container_volume 74
creator de Kerckhove, D. G.
Breese, M. B. H.
Smulders, P. J. M.
Jamieson, D. N.
description A graded composition Si1−xGex/Si [001] layer, which has recently been proposed as a method for bending and extracting protons from high-energy particle accelerators, has been studied by angle-resolved ion channeling analysis using focused MeV proton and He+ beams. Backscattering spectrometry confirms that the composition is linearly graded and a maximum Ge concentration of 0.16 was measured at the epilayer surface. Off-normal planes {111} are curved with respect to the substrate by a total angle of 0.332° and efficient bending of channeled particles along the curved planes and into the substrate is confirmed.
doi_str_mv 10.1063/1.123034
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title Confirmation of proton beam bending in graded Si1−xGex/Si layers using ion channeling
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