Quantum confinement effect in self-assembled, nanometer silicon dots

The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spect...

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Veröffentlicht in:	Applied physics letters 1998-12, Vol.73 (26), p.3881-3883
Hauptverfasser:	Ding, S. A., Ikeda, M., Fukuda, M., Miyazaki, S., Hirose, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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