High quantum efficiency II–VI photodetectors for the blue and blue-violet spectral range

We have fabricated II–VI wide gap hetero PIN photodiodes made of ZnMgSSe with excellent structural and interface quality and with a high external quantum efficiency of about 60%, which is close to the theoretical limit. The internal quantum efficiency reaches peak values of more than 80%. The onset...

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Veröffentlicht in:	Applied physics letters 1998-12, Vol.73 (24), p.3562-3564
Hauptverfasser:	Ehinger, M., Koch, C., Korn, M., Albert, D., Nürnberger, J., Hock, V., Faschinger, W., Landwehr, G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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