Current-induced local oxidation of metal films: Mechanism and quantum-size effects

Current-induced local oxidation of metal films: Mechanism and quantum-size effects

A novel route is introduced for oxidizing thin metal films with nanometer-scale resolution. By locally subjecting Ti and Nb films to high in-plane current densities, metal-oxide tunneling barriers are formed in a self-limiting fashion. The oxidation is triggered by current-induced atomic rearrangeme...

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Veröffentlicht in:Applied physics letters 1998-10, Vol.73 (15), p.2173-2175
Hauptverfasser: Schmidt, Thomas, Martel, Richard, Sandstrom, Robert L., Avouris, Phaedon
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container_title Applied physics letters
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creator Schmidt, Thomas
Martel, Richard
Sandstrom, Robert L.
Avouris, Phaedon
description A novel route is introduced for oxidizing thin metal films with nanometer-scale resolution. By locally subjecting Ti and Nb films to high in-plane current densities, metal-oxide tunneling barriers are formed in a self-limiting fashion. The oxidation is triggered by current-induced atomic rearrangements and local heating. At the final stages of the barrier formation, when only atomic-scale channels remain unoxidized, the oxidation rate decreases drastically while the conductance drops in steps of about 2e2/h. This behavior gives evidence of ballistic transport and a superior stability of such metallic nanowires against current-induced forces compared with the bulk metal.
doi_str_mv 10.1063/1.122413
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title Current-induced local oxidation of metal films: Mechanism and quantum-size effects
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