Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates

Visible light emission has been obtained from Er-doped α-GaN thin films grown on Si(111). The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N2. Photoexcitation with a He–Cd laser resulted in strong green emission from two narrow green lines a...

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Veröffentlicht in:	Applied physics letters 1998-10, Vol.73 (15), p.2143-2145
Hauptverfasser:	Birkhahn, R., Steckl, A. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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