Structural and optical properties of pseudomorphic InxGa1−xN alloys

Thick (225 nm) InxGa1−xN layers, grown on 5 μm thick GaN, were found by x-ray diffraction (XRD) measurements to be pseudomorphic up to x=0.114. Transmission electron microscopy showed that no misfit or additional threading dislocations were created at the InxGa1−xN/GaN interface. Composition of the...

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Veröffentlicht in:	Applied physics letters 1998-09, Vol.73 (13), p.1757-1759
Hauptverfasser:	Romano, L. T., Krusor, B. S., McCluskey, M. D., Bour, D. P., Nauka, K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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