Structural and optical properties of pseudomorphic InxGa1−xN alloys

Structural and optical properties of pseudomorphic InxGa1−xN alloys

Thick (225 nm) InxGa1−xN layers, grown on 5 μm thick GaN, were found by x-ray diffraction (XRD) measurements to be pseudomorphic up to x=0.114. Transmission electron microscopy showed that no misfit or additional threading dislocations were created at the InxGa1−xN/GaN interface. Composition of the...

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Veröffentlicht in:Applied physics letters 1998-09, Vol.73 (13), p.1757-1759
Hauptverfasser: Romano, L. T., Krusor, B. S., McCluskey, M. D., Bour, D. P., Nauka, K.
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container_end_page 1759
container_issue 13
container_start_page 1757
container_title Applied physics letters
container_volume 73
creator Romano, L. T.
Krusor, B. S.
McCluskey, M. D.
Bour, D. P.
Nauka, K.
description Thick (225 nm) InxGa1−xN layers, grown on 5 μm thick GaN, were found by x-ray diffraction (XRD) measurements to be pseudomorphic up to x=0.114. Transmission electron microscopy showed that no misfit or additional threading dislocations were created at the InxGa1−xN/GaN interface. Composition of the overlayers was determined by Rutherford backscattering spectrometry and correlated to both the a and c lattice constants from XRD. It was found that Vegard’s law is applicable at these compositions, if the biaxial strain is included. Biaxial strain must also be considered to accurately determine the bowing parameter as shown by optical transmission measurements.
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title Structural and optical properties of pseudomorphic InxGa1−xN alloys
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