Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy
We studied a site-control method for self-organized InAs quantum dots on GaAs substrates by a combination of in situ electron-beam (EB) lithography and molecular-beam epitaxy (MBE) using an ultrahigh-vacuum multichamber system. Small and shallow holes were patterned on a MBE-grown GaAs (001) surface...
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| Veröffentlicht in: | Applied physics letters 1998-09, Vol.73 (12), p.1712-1714 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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