Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes
Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppr...
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| Veröffentlicht in: | Applied physics letters 1998-07, Vol.73 (4), p.496-498 |
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| Sprache: | eng |
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| container_end_page | 498 |
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| container_issue | 4 |
| container_start_page | 496 |
| container_title | Applied physics letters |
| container_volume | 73 |
| creator | Chichibu, S. Cohen, D. A. Mack, M. P. Abare, A. C. Kozodoy, P. Minsky, M. Fleischer, S. Keller, S. Bowers, J. E. Mishra, U. K. Coldren, L. A. Clarke, D. R. DenBaars, S. P. |
| description | Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission. |
| doi_str_mv | 10.1063/1.121912 |
| format | Article |
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P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes</atitle><jtitle>Applied physics letters</jtitle><date>1998-07-27</date><risdate>1998</risdate><volume>73</volume><issue>4</issue><spage>496</spage><epage>498</epage><pages>496-498</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission.</abstract><doi>10.1063/1.121912</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1998-07, Vol.73 (4), p.496-498 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| title | Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes |
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