The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN

The results of persistent photoconductivity (PPC) and photoluminescence measurements made on radio-frequency plasma assisted molecular beam epitaxy grown, undoped, GaN are reported in this work. Hexagonal GaN (h-GaN) epilayers grown on sapphire and cubic GaN (c-GaN) epilayers grown on GaAs and cubic...

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Veröffentlicht in:	Applied physics letters 1998-07, Vol.73 (2), p.244-246
Hauptverfasser:	Reddy, C. V., Balakrishnan, K., Okumura, H., Yoshida, S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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