High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells

Stimulated emission (SE) in optically pumped InGaN/GaN multiquantum well (MQW) structures grown by metalorganic chemical vapor deposition was experimentally studied in the temperature range of 175–575 K. The GaN barriers were intentionally doped with a different Si concentration ranging from 1×1017...

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Veröffentlicht in:	Applied physics letters 1998-03, Vol.72 (13), p.1623-1625
Hauptverfasser:	Bidnyk, S., Schmidt, T. J., Cho, Y. H., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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