Melting point depression of Al clusters generated during the early stages of film growth: Nanocalorimetry measurements
This work investigates the thermodynamic properties of small structures of Al using an ultrasensitive thin-film differential scanning calorimeter. Al thin films were deposited onto a Si3N4 surface via thermal evaporation over a range of thicknesses from 6 to 50 Å. The Al films were discontinuous and...
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| Veröffentlicht in: | Applied Physics Letters 1998-03, Vol.72 (9), p.1098-1100 |
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| container_title | Applied Physics Letters |
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| creator | Lai, S. L. Carlsson, J. R. A. Allen, L. H. |
| description | This work investigates the thermodynamic properties of small structures of Al using an ultrasensitive thin-film differential scanning calorimeter. Al thin films were deposited onto a Si3N4 surface via thermal evaporation over a range of thicknesses from 6 to 50 Å. The Al films were discontinuous and formed nanometer-sized clusters. Calorimetry measurements demonstrated that the melting point of the clusters is lower than the value for bulk Al. We show that the melting point of the clusters is size dependent, decreasing by as much as 140 °C for 2 nm clusters. The results have relevance in several key areas for Al metallization in micro-electronics including the early stages of film growth and texture formation, the Al reflow process, and the dimensional stability of high aspect ratio Al lines. |
| doi_str_mv | 10.1063/1.120946 |
| format | Article |
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L. ; Carlsson, J. R. A. ; Allen, L. H.</creator><creatorcontrib>Lai, S. L. ; Carlsson, J. R. A. ; Allen, L. H.</creatorcontrib><description>This work investigates the thermodynamic properties of small structures of Al using an ultrasensitive thin-film differential scanning calorimeter. Al thin films were deposited onto a Si3N4 surface via thermal evaporation over a range of thicknesses from 6 to 50 Å. The Al films were discontinuous and formed nanometer-sized clusters. Calorimetry measurements demonstrated that the melting point of the clusters is lower than the value for bulk Al. We show that the melting point of the clusters is size dependent, decreasing by as much as 140 °C for 2 nm clusters. 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L.</creatorcontrib><creatorcontrib>Carlsson, J. R. A.</creatorcontrib><creatorcontrib>Allen, L. H.</creatorcontrib><title>Melting point depression of Al clusters generated during the early stages of film growth: Nanocalorimetry measurements</title><title>Applied Physics Letters</title><description>This work investigates the thermodynamic properties of small structures of Al using an ultrasensitive thin-film differential scanning calorimeter. Al thin films were deposited onto a Si3N4 surface via thermal evaporation over a range of thicknesses from 6 to 50 Å. The Al films were discontinuous and formed nanometer-sized clusters. Calorimetry measurements demonstrated that the melting point of the clusters is lower than the value for bulk Al. We show that the melting point of the clusters is size dependent, decreasing by as much as 140 °C for 2 nm clusters. The results have relevance in several key areas for Al metallization in micro-electronics including the early stages of film growth and texture formation, the Al reflow process, and the dimensional stability of high aspect ratio Al lines.</description><subject>ALUMINIUM</subject><subject>CALORIMETRY</subject><subject>GROWTH</subject><subject>MATERIALS SCIENCE</subject><subject>MELTING POINTS</subject><subject>SOLID CLUSTERS</subject><subject>TEXTURE</subject><subject>THERMAL ANALYSIS</subject><subject>THERMODYNAMIC PROPERTIES</subject><subject>THIN FILMS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkMFOwzAMhiMEEmMg8QjhxqUjrpd05TZNDJAGXOBcpanTFbXJlGSgvT2dxumX9fuzrI-xWxAzEAofYAa5KOfqjE1AFEWGAItzNhFCYKZKCZfsKsbvcZQ54oT9vFGfOtfyne9c4g3tAsXYece95cuem34fE4XIW3IUdKKGN_twBNKWOOnQH3hMuqV4BGzXD7wN_jdtH_m7dt7o3oduoBQOfCAd94EGcileswur-0g3_zllX-unz9VLtvl4fl0tN5lBKFI2x6IGVNoqyFVDKElhbQWJhTSoCGoJVCwMmXLsBUlUuZLSzmurhLIKccruTnd9TF0VTZfIbI13jkyqFGA5Wpiy-9OOCT7GQLbajS_rcKhAVEenFVQnp_gHBIxqTQ</recordid><startdate>19980302</startdate><enddate>19980302</enddate><creator>Lai, S. 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H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c317t-437b136af6126de35e63bf0e085c36e1b51e78cec91260e5362655f4bf606f633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>ALUMINIUM</topic><topic>CALORIMETRY</topic><topic>GROWTH</topic><topic>MATERIALS SCIENCE</topic><topic>MELTING POINTS</topic><topic>SOLID CLUSTERS</topic><topic>TEXTURE</topic><topic>THERMAL ANALYSIS</topic><topic>THERMODYNAMIC PROPERTIES</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lai, S. L.</creatorcontrib><creatorcontrib>Carlsson, J. R. A.</creatorcontrib><creatorcontrib>Allen, L. H.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied Physics Letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lai, S. L.</au><au>Carlsson, J. R. A.</au><au>Allen, L. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Melting point depression of Al clusters generated during the early stages of film growth: Nanocalorimetry measurements</atitle><jtitle>Applied Physics Letters</jtitle><date>1998-03-02</date><risdate>1998</risdate><volume>72</volume><issue>9</issue><spage>1098</spage><epage>1100</epage><pages>1098-1100</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>This work investigates the thermodynamic properties of small structures of Al using an ultrasensitive thin-film differential scanning calorimeter. Al thin films were deposited onto a Si3N4 surface via thermal evaporation over a range of thicknesses from 6 to 50 Å. The Al films were discontinuous and formed nanometer-sized clusters. Calorimetry measurements demonstrated that the melting point of the clusters is lower than the value for bulk Al. We show that the melting point of the clusters is size dependent, decreasing by as much as 140 °C for 2 nm clusters. The results have relevance in several key areas for Al metallization in micro-electronics including the early stages of film growth and texture formation, the Al reflow process, and the dimensional stability of high aspect ratio Al lines.</abstract><cop>United States</cop><doi>10.1063/1.120946</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied Physics Letters, 1998-03, Vol.72 (9), p.1098-1100 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_120946 |
| source | AIP Digital Archive |
| subjects | ALUMINIUM CALORIMETRY GROWTH MATERIALS SCIENCE MELTING POINTS SOLID CLUSTERS TEXTURE THERMAL ANALYSIS THERMODYNAMIC PROPERTIES THIN FILMS |
| title | Melting point depression of Al clusters generated during the early stages of film growth: Nanocalorimetry measurements |
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