The activation of Mg in GaN by annealing with minority-carrier injection
The activation of a Mg acceptor in GaN, by means of annealing under minority-carrier injection, is observed at a temperature above 300 °C. This activation is carried on with hydrogen left in the layer. The p-type GaN layers activated by this treatment are repassivated by additional annealing in an o...
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| Veröffentlicht in: | Applied physics letters 1998-03, Vol.72 (9), p.1101-1103 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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