Near-field scanning optical spectroscopy of an InGaN quantum well

Near-field scanning optical microscopy is used to image photoluminescence (PL) in an InGaN/GaN quantum well (QW) with spatial resolution of approximately 100 nm for temperatures between 50 and 295 K. Strong (∼50%) fluctuations in the quantum well photoluminescence as well as a tenfold enhancement of...

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Veröffentlicht in:	Applied physics letters 1998-02, Vol.72 (8), p.927-929
Hauptverfasser:	Crowell, P. A., Young, D. K., Keller, S., Hu, E. L., Awschalom, D. D.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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