Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors
A comparative computational study of the finite thickness and semi-infinite photothermal radiometric model is carried out for silicon, germanium, and gallium arsenide. The sensitivity of the photothermal radiometric finite thickness model towards the existence of very thin amorphous layers on crysta...
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| Veröffentlicht in: | Applied physics letters 1998-02, Vol.72 (6), p.695-697 |
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| container_title | Applied physics letters |
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| creator | Karmiotis, Y. Nestoros, M. Christofides, C. |
| description | A comparative computational study of the finite thickness and semi-infinite photothermal radiometric model is carried out for silicon, germanium, and gallium arsenide. The sensitivity of the photothermal radiometric finite thickness model towards the existence of very thin amorphous layers on crystalline substrates is also explored. This study can be used as an important guide for experimentalists. |
| doi_str_mv | 10.1063/1.120848 |
| format | Article |
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| ispartof | Applied physics letters, 1998-02, Vol.72 (6), p.695-697 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_120848 |
| source | AIP Digital Archive |
| title | Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors |
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