Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

In the growth of InGaN/GaN multiple quantum well (MQW) structures, a novel defect (called the “V-defect”) initiates at threading dislocations in one of the first quantum wells in a MQW stack. This defect is common to almost all InGaN MQW heterostructures. The nature of the V-defect was evaluated usi...

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Veröffentlicht in:	Applied physics letters 1998-02, Vol.72 (6), p.692-694
Hauptverfasser:	Wu, X. H., Elsass, C. R., Abare, A., Mack, M., Keller, S., Petroff, P. M., DenBaars, S. P., Speck, J. S., Rosner, S. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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