Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing

High-resolution electron microscopy was employed to study the atomic structure of As precipitates formed in low-temperature GaAs during high-temperature annealing. Almost all the precipitates after annealing at 850 and 950 °C were found to be twinned with a {1̄104} crystallographic twin plane. Twinn...

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Veröffentlicht in:	Applied Physics Letters 1998-01, Vol.72 (2), p.226-228
Hauptverfasser:	Ruvimov, S., Dicker, Ch, Washburn, J., Liliental-Weber, Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING ELECTRON MICROSCOPY GALLIUM ARSENIDES LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NUCLEATION PRECIPITATION STRUCTURAL CHEMICAL ANALYSIS TRANSMISSION ELECTRON MICROSCOPY TWINNING
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