Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing
High-resolution electron microscopy was employed to study the atomic structure of As precipitates formed in low-temperature GaAs during high-temperature annealing. Almost all the precipitates after annealing at 850 and 950 °C were found to be twinned with a {1̄104} crystallographic twin plane. Twinn...
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| Veröffentlicht in: | Applied Physics Letters 1998-01, Vol.72 (2), p.226-228 |
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| creator | Ruvimov, S. Dicker, Ch Washburn, J. Liliental-Weber, Z. |
| description | High-resolution electron microscopy was employed to study the atomic structure of As precipitates formed in low-temperature GaAs during high-temperature annealing. Almost all the precipitates after annealing at 850 and 950 °C were found to be twinned with a {1̄104} crystallographic twin plane. Twinning is associated with the crystallization of amorphous or liquidlike As precipitates during cooling. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of GaAs. Twin formation usually initiates on the long facet bounded by the {111}A plane. The crystallization usually terminated with a void because of the shrinkage of the As volume during solidification. |
| doi_str_mv | 10.1063/1.120693 |
| format | Article |
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Almost all the precipitates after annealing at 850 and 950 °C were found to be twinned with a {1̄104} crystallographic twin plane. Twinning is associated with the crystallization of amorphous or liquidlike As precipitates during cooling. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of GaAs. Twin formation usually initiates on the long facet bounded by the {111}A plane. 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Almost all the precipitates after annealing at 850 and 950 °C were found to be twinned with a {1̄104} crystallographic twin plane. Twinning is associated with the crystallization of amorphous or liquidlike As precipitates during cooling. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of GaAs. Twin formation usually initiates on the long facet bounded by the {111}A plane. The crystallization usually terminated with a void because of the shrinkage of the As volume during solidification.</description><subject>ANNEALING</subject><subject>ELECTRON MICROSCOPY</subject><subject>GALLIUM ARSENIDES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NUCLEATION</subject><subject>PRECIPITATION</subject><subject>STRUCTURAL CHEMICAL ANALYSIS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>TWINNING</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNpVkE9LAzEUxIMoWKvgR1hvXra-t9n8O5aiVSh4qScPIU2z3ch2d0lSit_elHrp6TFvfgzDEPKIMEPg9AVnWAFX9IpMEIQoKaK8JhMAoCVXDG_JXYw_WbKK0gn5Xh99XzRD2Jvkh77IYh6LMTjrR59McvH06oZjmdx-dMGkQ3DF0mRoewi-3xWt37UXpul7Z7ps3ZObxnTRPfzfKfl6e10v3svV5_JjMV-VtpIslQqqRjAExWplrNxyQWtbO0kld7ml5FQpw5jYcBROWlOrjeDVhkIFprGM0Sl5OucOMXkdrU_OtnbINWzSTAoEmZnnM2PDEGNwjR6D35vwqxH0aTiN-jwc_QPZ-l8c</recordid><startdate>19980112</startdate><enddate>19980112</enddate><creator>Ruvimov, S.</creator><creator>Dicker, Ch</creator><creator>Washburn, J.</creator><creator>Liliental-Weber, Z.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19980112</creationdate><title>Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing</title><author>Ruvimov, S. ; Dicker, Ch ; Washburn, J. ; Liliental-Weber, Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-902f75109549ac8d6734c4e8386e05286399a557b617e8ca49b762b3020afc553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>ANNEALING</topic><topic>ELECTRON MICROSCOPY</topic><topic>GALLIUM ARSENIDES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NUCLEATION</topic><topic>PRECIPITATION</topic><topic>STRUCTURAL CHEMICAL ANALYSIS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>TWINNING</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ruvimov, S.</creatorcontrib><creatorcontrib>Dicker, Ch</creatorcontrib><creatorcontrib>Washburn, J.</creatorcontrib><creatorcontrib>Liliental-Weber, Z.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied Physics Letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ruvimov, S.</au><au>Dicker, Ch</au><au>Washburn, J.</au><au>Liliental-Weber, Z.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing</atitle><jtitle>Applied Physics Letters</jtitle><date>1998-01-12</date><risdate>1998</risdate><volume>72</volume><issue>2</issue><spage>226</spage><epage>228</epage><pages>226-228</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>High-resolution electron microscopy was employed to study the atomic structure of As precipitates formed in low-temperature GaAs during high-temperature annealing. Almost all the precipitates after annealing at 850 and 950 °C were found to be twinned with a {1̄104} crystallographic twin plane. Twinning is associated with the crystallization of amorphous or liquidlike As precipitates during cooling. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of GaAs. Twin formation usually initiates on the long facet bounded by the {111}A plane. The crystallization usually terminated with a void because of the shrinkage of the As volume during solidification.</abstract><cop>United States</cop><doi>10.1063/1.120693</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied Physics Letters, 1998-01, Vol.72 (2), p.226-228 |
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| source | AIP Digital Archive |
| subjects | ANNEALING ELECTRON MICROSCOPY GALLIUM ARSENIDES LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NUCLEATION PRECIPITATION STRUCTURAL CHEMICAL ANALYSIS TRANSMISSION ELECTRON MICROSCOPY TWINNING |
| title | Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing |
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