High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off wavelength around 8 μm show a current responsivity of 2 A/W. By proper adjustment of the p-doping level above the n-...

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Veröffentlicht in:	Applied physics letters 1997-12, Vol.71 (22), p.3251-3253
Hauptverfasser:	Fuchs, F., Weimer, U., Pletschen, W., Schmitz, J., Ahlswede, E., Walther, M., Wagner, J., Koidl, P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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