Identification of isolation-edge related random telegraph signals in submicron silicon metal–oxide–semiconductor field-effect transistors

In this letter, evidence is given for a new class of random telegraph signals (RTSs) in submicron n-metal–oxide–semiconductor field-effect transistors (n-MOSFETs). These two-level fluctuations not only occur when the MOSFET is biased in linear operation but also when it is operated in the source or...

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Veröffentlicht in:	Applied physics letters 1997-12, Vol.71 (26), p.3874-3876
Hauptverfasser:	Lukyanchikova, N., Petrichuk, M. V., Garbar, N., Simoen, E., Claeys, C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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