Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure

Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure

Superconducting Nb–In0.53Ga0.47As/In0.77Ga0.23As/InP–Nb contacts with an electrode separation of 450 nm were fabricated. Due to the high mobility of the two-dimensional electron gas, the current transport can be described within the clean limit regime. At 0.3 K a critical current of 3.8 μA was obtai...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1997-12, Vol.71 (24), p.3575-3577
Hauptverfasser: Schäpers, Th, Kaluza, A., Neurohr, K., Malindretos, J., Crecelius, G., van der Hart, A., Hardtdegen, H., Lüth, H.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 3577
container_issue 24
container_start_page 3575
container_title Applied physics letters
container_volume 71
creator Schäpers, Th
Kaluza, A.
Neurohr, K.
Malindretos, J.
Crecelius, G.
van der Hart, A.
Hardtdegen, H.
Lüth, H.
description Superconducting Nb–In0.53Ga0.47As/In0.77Ga0.23As/InP–Nb contacts with an electrode separation of 450 nm were fabricated. Due to the high mobility of the two-dimensional electron gas, the current transport can be described within the clean limit regime. At 0.3 K a critical current of 3.8 μA was obtained for 6 μm wide contacts leading to a characteristic voltage of 190 μV. The decrease of the critical current with increasing temperature can be explained by a theory developed by A. Chrestin, T. Matsuyama, and U. Merkt [Phys. Rev. B 49, 498 (1994)], which takes δ-shaped barriers at the superconductor/semiconductor interfaces into account.
doi_str_mv 10.1063/1.120410
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_120410</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_120410</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-3cfab40a20a5fc29aef1dffe135b27811e675909530ae60af8580c028376a1c73</originalsourceid><addsrcrecordid>eNo9UMtOwzAQtBBIlILEJ_jIJe1uXOdxrCooRRVwgHPkuus2qLUjbyLKH3DmE_kSgoo4jXZmZ2c1QlwjjBAyNcYRpjBBOBEDhDxPFGJxKgYAoJKs1HguLpjf-lGnSg1E9xCYmi0HL8k5sq2svXxcjdv3kKzrPXmugzc7Sbtei_3WxrDkNna27SKx7Lj2G2lkw9Stwz7EZltbufCHucHvz6_DlMcL_yy31FIM_75LcebMjunqD4fi9e72ZXafLJ_mi9l0mdi0xDZR1pnVBEwKRrueMuRw3X-JSq_SvECkLNcllFqBoQyMK3QBFtJC5ZlBm6uhuDnetX04R3JVE-u9iR8VQvVbV4XVsS71AxFZX58</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure</title><source>AIP Digital Archive</source><creator>Schäpers, Th ; Kaluza, A. ; Neurohr, K. ; Malindretos, J. ; Crecelius, G. ; van der Hart, A. ; Hardtdegen, H. ; Lüth, H.</creator><creatorcontrib>Schäpers, Th ; Kaluza, A. ; Neurohr, K. ; Malindretos, J. ; Crecelius, G. ; van der Hart, A. ; Hardtdegen, H. ; Lüth, H.</creatorcontrib><description>Superconducting Nb–In0.53Ga0.47As/In0.77Ga0.23As/InP–Nb contacts with an electrode separation of 450 nm were fabricated. Due to the high mobility of the two-dimensional electron gas, the current transport can be described within the clean limit regime. At 0.3 K a critical current of 3.8 μA was obtained for 6 μm wide contacts leading to a characteristic voltage of 190 μV. The decrease of the critical current with increasing temperature can be explained by a theory developed by A. Chrestin, T. Matsuyama, and U. Merkt [Phys. Rev. B 49, 498 (1994)], which takes δ-shaped barriers at the superconductor/semiconductor interfaces into account.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.120410</identifier><language>eng</language><ispartof>Applied physics letters, 1997-12, Vol.71 (24), p.3575-3577</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-3cfab40a20a5fc29aef1dffe135b27811e675909530ae60af8580c028376a1c73</citedby><cites>FETCH-LOGICAL-c291t-3cfab40a20a5fc29aef1dffe135b27811e675909530ae60af8580c028376a1c73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Schäpers, Th</creatorcontrib><creatorcontrib>Kaluza, A.</creatorcontrib><creatorcontrib>Neurohr, K.</creatorcontrib><creatorcontrib>Malindretos, J.</creatorcontrib><creatorcontrib>Crecelius, G.</creatorcontrib><creatorcontrib>van der Hart, A.</creatorcontrib><creatorcontrib>Hardtdegen, H.</creatorcontrib><creatorcontrib>Lüth, H.</creatorcontrib><title>Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure</title><title>Applied physics letters</title><description>Superconducting Nb–In0.53Ga0.47As/In0.77Ga0.23As/InP–Nb contacts with an electrode separation of 450 nm were fabricated. Due to the high mobility of the two-dimensional electron gas, the current transport can be described within the clean limit regime. At 0.3 K a critical current of 3.8 μA was obtained for 6 μm wide contacts leading to a characteristic voltage of 190 μV. The decrease of the critical current with increasing temperature can be explained by a theory developed by A. Chrestin, T. Matsuyama, and U. Merkt [Phys. Rev. B 49, 498 (1994)], which takes δ-shaped barriers at the superconductor/semiconductor interfaces into account.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo9UMtOwzAQtBBIlILEJ_jIJe1uXOdxrCooRRVwgHPkuus2qLUjbyLKH3DmE_kSgoo4jXZmZ2c1QlwjjBAyNcYRpjBBOBEDhDxPFGJxKgYAoJKs1HguLpjf-lGnSg1E9xCYmi0HL8k5sq2svXxcjdv3kKzrPXmugzc7Sbtei_3WxrDkNna27SKx7Lj2G2lkw9Stwz7EZltbufCHucHvz6_DlMcL_yy31FIM_75LcebMjunqD4fi9e72ZXafLJ_mi9l0mdi0xDZR1pnVBEwKRrueMuRw3X-JSq_SvECkLNcllFqBoQyMK3QBFtJC5ZlBm6uhuDnetX04R3JVE-u9iR8VQvVbV4XVsS71AxFZX58</recordid><startdate>19971215</startdate><enddate>19971215</enddate><creator>Schäpers, Th</creator><creator>Kaluza, A.</creator><creator>Neurohr, K.</creator><creator>Malindretos, J.</creator><creator>Crecelius, G.</creator><creator>van der Hart, A.</creator><creator>Hardtdegen, H.</creator><creator>Lüth, H.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19971215</creationdate><title>Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure</title><author>Schäpers, Th ; Kaluza, A. ; Neurohr, K. ; Malindretos, J. ; Crecelius, G. ; van der Hart, A. ; Hardtdegen, H. ; Lüth, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-3cfab40a20a5fc29aef1dffe135b27811e675909530ae60af8580c028376a1c73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schäpers, Th</creatorcontrib><creatorcontrib>Kaluza, A.</creatorcontrib><creatorcontrib>Neurohr, K.</creatorcontrib><creatorcontrib>Malindretos, J.</creatorcontrib><creatorcontrib>Crecelius, G.</creatorcontrib><creatorcontrib>van der Hart, A.</creatorcontrib><creatorcontrib>Hardtdegen, H.</creatorcontrib><creatorcontrib>Lüth, H.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schäpers, Th</au><au>Kaluza, A.</au><au>Neurohr, K.</au><au>Malindretos, J.</au><au>Crecelius, G.</au><au>van der Hart, A.</au><au>Hardtdegen, H.</au><au>Lüth, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure</atitle><jtitle>Applied physics letters</jtitle><date>1997-12-15</date><risdate>1997</risdate><volume>71</volume><issue>24</issue><spage>3575</spage><epage>3577</epage><pages>3575-3577</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Superconducting Nb–In0.53Ga0.47As/In0.77Ga0.23As/InP–Nb contacts with an electrode separation of 450 nm were fabricated. Due to the high mobility of the two-dimensional electron gas, the current transport can be described within the clean limit regime. At 0.3 K a critical current of 3.8 μA was obtained for 6 μm wide contacts leading to a characteristic voltage of 190 μV. The decrease of the critical current with increasing temperature can be explained by a theory developed by A. Chrestin, T. Matsuyama, and U. Merkt [Phys. Rev. B 49, 498 (1994)], which takes δ-shaped barriers at the superconductor/semiconductor interfaces into account.</abstract><doi>10.1063/1.120410</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1997-12, Vol.71 (24), p.3575-3577
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_120410
source AIP Digital Archive
title Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T15%3A39%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Josephson%20effect%20in%20Nb/two-dimensional%20electron%20gas%20structures%20using%20a%20pseudomorphic%20InxGa1%E2%88%92xAs/InP%20heterostructure&rft.jtitle=Applied%20physics%20letters&rft.au=Sch%C3%A4pers,%20Th&rft.date=1997-12-15&rft.volume=71&rft.issue=24&rft.spage=3575&rft.epage=3577&rft.pages=3575-3577&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.120410&rft_dat=%3Ccrossref%3E10_1063_1_120410%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true