Localized electron trapping and trap distributions in SiO2 gate oxides
Localized trap filling and trap creation in SiO2 were investigated by injecting electrons into metal-oxide-semiconductor structures with a scanning tunneling microscope. The resulting charging causes changes in the oxide potential that were studied as a function of an applied oxide field. The charge...
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| Veröffentlicht in: | Applied physics letters 1997-11, Vol.71 (21), p.3123-3125 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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