Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity

Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity

The x-ray interference technique has been applied to evaluate the structural changes of high temperature grown chemical vapor deposited (CVD) SiO2 film under several post annealing conditions. In annealing above 800 °C in O2 ambient, a thermal oxide growth has been found at the CVD SiO2/Si interface...

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Veröffentlicht in:Applied physics letters 1997-10, Vol.71 (14), p.1954-1956
Hauptverfasser: Awaji, Naoki, Ohkubo, Satoshi, Nakanishi, Toshiro, Aoyama, Takayuki, Sugita, Yoshihiro, Takasaki, Kanetake, Komiya, Satoshi
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container_end_page 1956
container_issue 14
container_start_page 1954
container_title Applied physics letters
container_volume 71
creator Awaji, Naoki
Ohkubo, Satoshi
Nakanishi, Toshiro
Aoyama, Takayuki
Sugita, Yoshihiro
Takasaki, Kanetake
Komiya, Satoshi
description The x-ray interference technique has been applied to evaluate the structural changes of high temperature grown chemical vapor deposited (CVD) SiO2 film under several post annealing conditions. In annealing above 800 °C in O2 ambient, a thermal oxide growth has been found at the CVD SiO2/Si interface, and its precise thicknesses have been determined. The estimated diffusion coefficient of the oxidant in CVD film was about three times larger compared to that of thermal oxide. A threshold voltage shift in the oxide was found to strongly correlate to the thickness of the thermal oxide rather than to thermal modifications of the CVD SiO2 itself.
doi_str_mv 10.1063/1.119753
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title Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity
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