Persistent photoconductivity in n-type GaN
We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the co...
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| Veröffentlicht in: | Applied Physics Letters 1997-08, Vol.71 (8), p.1098-1100 |
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| container_title | Applied Physics Letters |
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| creator | Hirsch, Michèle T. Wolk, J. A. Walukiewicz, W. Haller, E. E. |
| description | We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the conduction persists at a level 80% higher than the equilibrium dark conduction for over 104 s after removing the excitation. We have determined the spectral dependence for the optical cross section for PPC and obtain an optical ionization energy of ∼2.7 eV. The temperature dependence of the photoconductivity decay and its nonexponential shape are explained by a distribution of capture barriers with a mean capture barrier of 0.2 eV and a width of ∼26 meV. |
| doi_str_mv | 10.1063/1.119738 |
| format | Article |
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A.</creatorcontrib><creatorcontrib>Walukiewicz, W.</creatorcontrib><creatorcontrib>Haller, E. E.</creatorcontrib><creatorcontrib>Lawrence Berkeley National Laboratory</creatorcontrib><title>Persistent photoconductivity in n-type GaN</title><title>Applied Physics Letters</title><description>We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the conduction persists at a level 80% higher than the equilibrium dark conduction for over 104 s after removing the excitation. We have determined the spectral dependence for the optical cross section for PPC and obtain an optical ionization energy of ∼2.7 eV. 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E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c317t-64c8af3b92acebe67aaac8678b04f58d8ec1c91aaafa3059382a8c334816313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>DECAY</topic><topic>DOPED MATERIALS</topic><topic>GALLIUM COMPOUNDS</topic><topic>GALLIUM NITRIDES</topic><topic>MATERIALS SCIENCE</topic><topic>METASTABLE STATES</topic><topic>PHOTOCONDUCTIVITY</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hirsch, Michèle T.</creatorcontrib><creatorcontrib>Wolk, J. A.</creatorcontrib><creatorcontrib>Walukiewicz, W.</creatorcontrib><creatorcontrib>Haller, E. E.</creatorcontrib><creatorcontrib>Lawrence Berkeley National Laboratory</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied Physics Letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hirsch, Michèle T.</au><au>Wolk, J. A.</au><au>Walukiewicz, W.</au><au>Haller, E. E.</au><aucorp>Lawrence Berkeley National Laboratory</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Persistent photoconductivity in n-type GaN</atitle><jtitle>Applied Physics Letters</jtitle><date>1997-08-25</date><risdate>1997</risdate><volume>71</volume><issue>8</issue><spage>1098</spage><epage>1100</epage><pages>1098-1100</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the conduction persists at a level 80% higher than the equilibrium dark conduction for over 104 s after removing the excitation. We have determined the spectral dependence for the optical cross section for PPC and obtain an optical ionization energy of ∼2.7 eV. The temperature dependence of the photoconductivity decay and its nonexponential shape are explained by a distribution of capture barriers with a mean capture barrier of 0.2 eV and a width of ∼26 meV.</abstract><cop>United States</cop><doi>10.1063/1.119738</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied Physics Letters, 1997-08, Vol.71 (8), p.1098-1100 |
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| subjects | CHEMICAL VAPOR DEPOSITION DECAY DOPED MATERIALS GALLIUM COMPOUNDS GALLIUM NITRIDES MATERIALS SCIENCE METASTABLE STATES PHOTOCONDUCTIVITY TEMPERATURE DEPENDENCE THIN FILMS |
| title | Persistent photoconductivity in n-type GaN |
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