Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy
A cubic GaN/AlGaN heterostructure has been grown on a GaAs (100) substrate by metalorganic vapor-phase epitaxy under low V/III ratio conditions, which resulted in a flat GaN layer. Stimulated emission was observed at 387 nm from the cleaved edge of an optically pumped cubic GaN/AlGaN heterostructure...
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| Veröffentlicht in: | Applied physics letters 1997-08, Vol.71 (6), p.812-814 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A cubic GaN/AlGaN heterostructure has been grown on a GaAs (100) substrate by metalorganic vapor-phase epitaxy under low V/III ratio conditions, which resulted in a flat GaN layer. Stimulated emission was observed at 387 nm from the cleaved edge of an optically pumped cubic GaN/AlGaN heterostructure at 34 K. The threshold power density was 2.4 MW/cm2. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.119654 |