The growth of AlGaAs–InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects

Critical interdependent effects have been observed in the growth of AlGaAs/InGaAs quantum-well structures by molecular beam epitaxy. It is shown that statistical experimental design is an effective method for quickly optimizing complex device structures. This technique is very useful for the optimiz...

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Veröffentlicht in:	Applied physics letters 1997-01, Vol.70 (1), p.52-54
Hauptverfasser:	Bicknell-Tassius, Robert N., Lee, Kyeong, Brown, April S., Dagnall, Georgianna, May, Gary
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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